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Materials Science at Oregon State University

Device physics modeling of surfaces and interfaces from an induced gap state perspective

Date: Thursday, May 12th
Presenter: Prof. John Wager, OSU Electrical Engineering

Abstract


Induced gap state (IGS) modeling attempts to explain the electronic properties of metal, semiconductor, or insulator surfaces or interfaces in terms of intrinsic behavior associated with quantum mechanically induced evanescent states arising from the abrupt termination of a bulk material at a surface or interface. Although IGS modeling pertains to a wide variety of surfaces and interfaces, this presentation will focus primarily on one specific case – the metal-semiconductor interface – in order to provide a tutorial introduction to the topic of IGS modeling.